During my time at Bell Laboratories, I worked for Nobel laureate George Smith, supervising a group working on Charge Coupled Devices, particularly for data storage and signal processing applications.  Within the same department, there was another group dedicated to imaging.  Now everyone knows that imaging is where the CCD has excelled, and in some work that was never published, I showed that there was no economic case for CCD's in the memory hierarchy.  Years later, when I joined Fairchild, we had to go through that same argument again.

The principal evidence of my CCD activity is now a handful of papers and patents.  The CCD papers are here,  and the CCD patents are with all the other patents.

1. N. L. Schryer, R. J. Strain, "A Nonlinear Diffusion Analysis of CCD Transfer," Bell System Technical Journal, 50, 1721 (1971).
2. C. N. Berglund, R. J. Strain, "Fabrication and Performance Considerations of Charge Transfer Dynamic Shift Registers," Bell System Technical Journal, 51, 655 (1972).
3. R. H. Walden, R. H. Krambeck, R. J. Strain, J. McKenna, N. L. Schryer, G. E. Smith, "The Buried Channel Charge Coupled Device," Bell System Technical Journal, 51, 1635 (1972).
4. R. J. Strain, "Properties of an Idealized Travelling Wave Charge Coupled Device," IEEE Trans. Electron Devices, ED-19, 1119 (1972).
5. R. J. Strain, A. Goetzberger, A. D. Lopez, "On the Formation of Surface States during Stress Aging of Thermal Si-SiO Interfaces," J. Electrochem. Soc., 120, 90 (1973).
6. A. D. Lopez, R. J. Strain, "MOS Surface Potiential and Gross Nonuniformities," Sol. St. Elecs., 16, 507 (1973).
7. R. J. Krambeck, T. F. Retajczyk, Jr., D. J. Silversmith, R. J. Strain, "A 4160-bit C4D Serial Memory," IEEE J. Sol. St. Circ., SC-9, 436 (1974).