Charge Coupled Devices
During my time at Bell Laboratories, I worked for Nobel laureate George Smith, supervising a group working on
Charge Coupled Devices, particularly for data storage and signal processing
applications. Within the same department, there was another group
dedicated to imaging. Now everyone knows that imaging is where the
CCD has excelled, and in some work that was never published, I showed that
there was no economic case for CCD's in the memory hierarchy. Years
later, when I joined Fairchild, we had to go through that same argument
The principal evidence of my CCD activity is now a handful of papers
and patents. The CCD papers are here, and the CCD patents are
with all the other patents.
N. L. Schryer, R. J. Strain, "A Nonlinear Diffusion Analysis of CCD Transfer,"
Bell System Technical Journal, 50, 1721 (1971).
C. N. Berglund, R. J. Strain, "Fabrication and Performance Considerations
of Charge Transfer Dynamic Shift Registers," Bell System Technical Journal,
51, 655 (1972).
R. H. Walden, R. H. Krambeck, R. J. Strain, J. McKenna, N. L. Schryer,
G. E. Smith, "The Buried Channel Charge Coupled Device," Bell System Technical
Journal, 51, 1635 (1972).
R. J. Strain, "Properties of an Idealized Travelling Wave Charge Coupled
Device," IEEE Trans. Electron Devices, ED-19, 1119 (1972).
R. J. Strain, A. Goetzberger, A. D. Lopez, "On the Formation of Surface
States during Stress Aging of Thermal Si-SiO Interfaces," J. Electrochem.
Soc., 120, 90 (1973).
A. D. Lopez, R. J. Strain, "MOS Surface Potiential and Gross Nonuniformities,"
Sol. St. Elecs., 16, 507 (1973).
R. J. Krambeck, T. F. Retajczyk, Jr., D. J. Silversmith, R. J. Strain,
"A 4160-bit C4D Serial Memory," IEEE J. Sol. St. Circ., SC-9, 436 (1974).