PATENTS
- R. F. Scott, R. J. Strain,
"Methods of Preparing a Cadmium Sulfide Thin Film from an Aqueous
Solution," U. S.
Patent No. 3,530,053 (1970).
- C. P. Sandbank, R. J.
Strain, "Optical Device for Responding to Difference Frequency of
Incident Light Beams," U. S.
Patent No. 3,530,299 (1970).
- R. J. Strain, "Solid-State
Display Device Employing Continuous Phosphor Layers," U. S.
Patent No. 3,531,585 (1970).
- R. J. Strain, "Cyclotron
Resonance Phototube Having Axial Magnetic Field and Transverse Electric
Field," U. S.
Patent No. 3,549,891 (1970).
- R. H. Krambeck, P. T. Panousis, R. J. Strain,
"Electronic Switch Utilizing a Semiconductor with Deep Impurity
Levels," U. S.
Patent No. 3,654,531 (1972).
- R. H. Krambeck, R. J. Strain,
"Compensating Circuit for Semiconductive
Apparatus," U. S.
Patent No. 3,831,041 (1974).
- D. J. Silversmith, R. J.
Strain, "Detection, Inversion, and Regeneration in Charge Transfer
Apparatus," U. S.
Patent No. 3,838,438 (1974).
- R. H. Krambeck, G. E. Smith, R. J.
Strain, "Conductively Connected Charge Coupled Devices," U. S.
Patent No. 3,906,542 (1975).
- G. E. Smith, R. J. Strain,
"Two and Four Phase Charge Coupled Devices," U. S.
Patent No. 3,921,195 (1975).
- R. J. Strain, K. K. Thornber, "Transfer Filter for
Charge Transfer Devices," U. S.
Patent No. 3,925,806 (1975).
- R. J. Strain, R. H. Walden,
"Analog Inverter for Use in Charge Transfer Apparatus," U. S.
Patent No. 3,935,477 (1976).
- G. E. Smith, R. J. Strain,
"Method of Fabricating Polysilicon
Electrodes," U. S.
Patent No. 4,347,656 (1982).
- R. C. Varshney, R. J. Strain,
"Identification of Repaired Integrated Circuits," U. S.
Patent No. 4,480,199 (1984).
- K. Anand,
R. J. Strain, "Ion Implantation to Increase Emitter Energy Gap in
Bipolar Transistors," U. S.
Patent No. 4,559,696 (1985).
- R. J. Strain, "Process for
Fabricating Optical Wave-Guiding Components and Components Made by the
Process," U. S.
Patent No. 4,585,299 (1986).
- R. J. Strain, "Method for
Making a CMOS Circuit Having a Reduced Tendency to Latch by Controlling
the Band-Gap of Source and Drain Regions," U. S.
Patent No. 4,603,471 (1986).
- R. J. Strain, "CMOS Circuit
Having a Reduced Tendency to Latch," U. S.
Patent No. 4,728,998 (1988).
- W. D. Llewelyn, R. J. Strain,
"Multiple Gap Read/Write Head for Data Storage Devices," U. S.
Patent No. 5,426,539 (1995).
- S. Aronowitz,
R. J. Strain, "Defect Free Bipolar Process," U. S. Patent No. 5,453,389
(1995).
- R. J. Strain, M. H. Manley,
"Memory with Multiple Erase Modes," U. S.
Patent No. 5,517,453 (1996).
- W. D. Llewellyn, R. J.
Strain, "Multiple Gap Read/Write Head For
Data Storage Devices," U. S.
Patent No. 5,644,457 (1997).
- R. J. Strain, "Tunable Microelectromechanical System
Resonator," U. S.
Patent No. 5,729,075 (1998).
- W. D. Llewellyn, R. J.
Strain, "Method of Reading
and Writing Data on a Magnetic Medium," U. S.
Patent No. 5,912,779 (1999).
- I. Nachumovsky,
Y. Nissan-Cohen, and R. J. Strain, "Multi-bit Programmable Memory Cell
Having Multiple Anti-fuse Elements," U. S.
Patent No. 6,590,797 (2003).
- I. Nachumovsky,
Y. Nissan-Cohen, and R. J. Strain, "Mask Programmable Read-Only Memory
(ROM) Cell," U. S. Patent No. 6,809,948 (2004).
- S.
Levin, S. Shapira, I. Noat, R. J. Strain, Y. Netzer, "Cobalt Silicide
Schottky Diode on Isolated Well ," U. S. Patent No. 7,485,941 (2009).
- S.
Levin, S. Shapira, I. Noat, R. J. Strain, Y. Netzer, "Gate Defined
Schottky Diode ," U. S. Patent No. 7,544,557 (2009).
- A.
K. Kapoor, R. Strain, R. Marko, "Apparatus
and Method for Improving Drive-strength and Leakage of Deep Submicron
MOS Transistors," U. S. Patent No. 7,683,433 (2010).
- R.
Strain, "Apparatus For Using A Well Current Source To Effect A Dynamic
Threshold Voltage Of A MOS Transistor," U. S. Patent No. 7,863,689
(2011).
- A.
K. Kapoor, R. Strain, R. Marko, "Apparatus
and Method for Dynamic Threshold Voltage Control of
MOS Transistors in Dynamic Logic Circuits," U. S. Patent No. 7,898,297 (2011).
- A.
K. Kapoor, R. Strain, R. Marko, "Method for Reducing Leakage Current
and Increasing Drive Current in a Metal-Oxide Semiconductor (MOS)
Transistor ," U. S. Patent No. 8,048,732 (2011).